DD1000S33HE3BOSA1

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Infineon Technologies

DIODE MOD GP 3300V AGIHVB130-3

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Infineon Technologies

DIODE MOD GP 3300V AGIHVB130-3

Technical Specifications

Parameters and characteristics for this part

Specification	DD1000S33HE3BOSA1

Current - Average Rectified (Io) (per Diode)	1000 A (DC)
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Module
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	3300 V
Voltage - Forward (Vf) (Max) @ If [Max]	3.85 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Mounting Type	Diode Configuration	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Current - Average Rectified (Io) (per Diode)
Infineon Technologies DD1000S33HE3BPSA1	150 °C	-40 °C	Standard Recovery >500ns	200 mA	Chassis Mount	2 Independent	Module	3300 V	3.85 V	Standard
Infineon Technologies DD1000S33HE3BOSA1	150 °C	-40 °C	Standard Recovery >500ns	200 mA	Chassis Mount	2 Independent	Module	3300 V	3.85 V	Standard	1000 A (DC)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 3300 V 1000A (DC) Chassis Mount Module

Technical documentation and resources