TK20P04M1,RQ(S

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A DPAK

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK20P04M1,RQ(S

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	985 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	27 W
Rds On (Max) @ Id, Vgs [Max]	29 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Vgs (Max)
Toshiba Semiconductor and Storage TK20P04M1,RQ(S	985 pF	Surface Mount	N-Channel	20 A	27 W	29 mOhm	40 V	150 °C	4.5 V 10 V	MOSFET (Metal Oxide)	2.3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 20A (Ta) 27W (Tc) Surface Mount DPAK

Technical documentation and resources