2EDL05I06PJXUMA1

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EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.36 A SOURCE AND 0.7 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT PG-DSO-14 PACKAGE AND WORKS WITH IGBTS. FEATURES: INTEGRATED BOOTSTRAP DIODE, SHOOT THROUGH PROTECTION

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2EDL05I06PJXUMA1

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INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

2EDL05 Series

EiceDRIVER™ Compact - Optimized 600V half bridge gate driver IC with LS-SOI technology to controlIGBTs

Technical Specifications

Parameters and characteristics for this part

Specification	2EDL05I06PJXUMA1

Channel Type	Independent
Current - Peak Output (Sink)	500 mA
Current - Peak Output (Source)	250 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	24 ns
Gate Channel	N-Channel, P-Channel
Gate Type	IGBT, MOSFET, N-Channel, P-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	1.7 V
Logic Voltage - VIL	1.1 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	PG-DSO-14, 14-SOIC
Package Width	3.9 mm
Rise Time (Typ)	48 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

2EDL05 Series

Part	Gate Channel	Gate Type	Rise Time (Typ)	Fall Time (Typ)	High Side Voltage - Max (Bootstrap)	Mounting Type	Logic Voltage - VIL	Logic Voltage - VIH	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Channel Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Type	Driven Configuration	Package Width	Package Name	Package Length	Number of Drivers	Current - Peak Output (Sink)	Current - Peak Output (Source)
INFINEON 2EDL05N06PJXUMA1	N-Channel P-Channel	IGBT MOSFET N-Channel P-Channel MOSFET	48 ns	24 ns	600 V	Surface Mount	1.1 V	1.7 V	25 V	10 VDC	Independent	-40 °C	150 °C	Non-Inverting	Half-Bridge	3.9 mm	14-SOIC PG-DSO-14-2	0.154 in	2
INFINEON 2EDL05I06PJXUMA1	N-Channel P-Channel	IGBT MOSFET N-Channel P-Channel MOSFET	48 ns	24 ns	600 V	Surface Mount	1.1 V	1.7 V	20 V	10 VDC	Independent	-40 °C	150 °C	Non-Inverting	Half-Bridge	3.9 mm	14-SOIC PG-DSO-14	0.154 in	2	500 mA	250 mA
INFINEON 2EDL05N06PFXUMA1	N-Channel	IGBT MOSFET N-Channel MOSFET	48 ns	24 ns	600 V	Surface Mount	1.1 V	1.7 V	20 V	10 VDC	Independent	-40 °C	150 °C	Non-Inverting	Half-Bridge	3.9 mm	8-SOIC PG-DSO-8	0.154 in	2

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

2EDL05I06PJXUMA1 | Datasheet

Application Note EN