CLH07(TE16L,NMB,Q)

Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 5A L-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 5A L-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CLH07(TE16L,NMB,Q)

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	L-FLAT™
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	L-FLAT™ (4x5.5)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Technology
Toshiba Semiconductor and Storage CLH07(TE16R,Q)	L-FLAT™ (4x5.5)	L-FLAT™	400 V	200 mA 500 ns	5 A	Surface Mount	150 °C	-40 °C	35 ns	1.8 V	10 µA	Standard
Toshiba Semiconductor and Storage CLH07(TE16L,NMB,Q)	L-FLAT™ (4x5.5)	L-FLAT™	400 V	200 mA 500 ns	5 A	Surface Mount	150 °C	-40 °C	35 ns	1.8 V	10 µA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 400 V 5A Surface Mount L-FLAT™ (4x5.5)

Technical documentation and resources