IPT65R033G7XTMA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 69A 8HSOF

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 69A 8HSOF

Technical Specifications

Parameters and characteristics for this part

Specification	IPT65R033G7XTMA1

Current - Continuous Drain (Id) @ 25°C	69 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	5000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max)	391 W
Rds On (Max) @ Id, Vgs [Max]	33 mOhm
Supplier Device Package	PG-HSOF-8-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Technology
Infineon Technologies IPT65R033G7XTMA1	8-PowerSFN	-55 °C	150 °C	20 V	69 A	PG-HSOF-8-2	5000 pF	110 nC	4 V	650 V	10 V	Surface Mount	391 W	N-Channel	33 mOhm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 69A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2

Technical documentation and resources