IDP30E60XKSA1

Obsolete

Infineon Technologies

DIODE GEN PURP 600V 52.3A TO220

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Obsolete

Infineon Technologies

DIODE GEN PURP 600V 52.3A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IDP30E60XKSA1

Current - Average Rectified (Io)	52.3 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	126 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO220-2-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Technology
Infineon Technologies IDP30E60XKSA1	200 mA 500 ns	600 V	126 ns	52.3 A	PG-TO220-2-2	2 V	175 ░C	-55 C	50 µA	Through Hole	TO-220-2	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 52.3A Through Hole PG-TO220-2-2

Technical documentation and resources