MAT04EY

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Analog Devices

MATCHED QUAD TRANSISTOR

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Analog Devices

MATCHED QUAD TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	MAT04EY

Current - Collector (Ic) (Max) [Max]	30 mA
Current - Collector Cutoff (Max) [Max]	5 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	400 hFE
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-CDIP
Power - Max [Max]	350 mW
Supplier Device Package	14-CerDIP
Transistor Type	4 NPN (Quad) Matched Pairs
Vce Saturation (Max) @ Ib, Ic [Max]	60 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Mounting Type	Supplier Device Package	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic [Max]
Analog Devices MAT04AY	30 mA	4 NPN (Quad) Matched Pairs	40 V	350 mW	Through Hole	14-CerDIP	300 MHz	5 nA	14-CDIP
Analog Devices MAT04EY	30 mA	4 NPN (Quad) Matched Pairs	40 V	350 mW	Through Hole	14-CerDIP	300 MHz	5 nA	14-CDIP	400 hFE	85 °C	-40 °C	60 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 4 NPN (Quad) Matched Pairs 40V 30mA 300MHz 350mW Through Hole 14-CERDIP

Technical documentation and resources

No documents available