TK3P50D,RQ(S

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Toshiba Semiconductor and Storage

MOSFET N-CH 500V 3A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 500V 3A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK3P50D,RQ(S

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.4 V

Part	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Technology	Operating Temperature	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage TK3P50D,RQ(S	DPAK	Surface Mount	3 Ohm	60 W	10 V	280 pF	3 A	7 nC	N-Channel	500 V	MOSFET (Metal Oxide)	150 °C	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.4 V

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General part information

N-Channel 500 V 3A (Ta) 60W (Tc) Surface Mount DPAK

Technical documentation and resources