IXTP6N50P

Obsolete

IXYS

MOSFET N-CH 500V 6A TO220AB

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 500V 6A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP6N50P

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.6 nC
Input Capacitance (Ciss) (Max) @ Vds	740 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXTP6N50P	500 V	TO-220-3	MOSFET (Metal Oxide)	1.1 Ohm	TO-220-3	740 pF	30 V	14.6 nC	6 A	N-Channel	5 V	100 W	10 V	Through Hole	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 6A (Tc) 100W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available