STW16NM50N

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STMicroelectronics

MOSFET N-CH 500V 15A TO247-3

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STMicroelectronics

MOSFET N-CH 500V 15A TO247-3

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General part information

N-Channel 500 V 15A (Tc) 125W (Tc) Through Hole TO-247-3

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Parameters and characteristics commom to parts in this series

Specification	STW16NM50N	STW16N Series

Current - Continuous Drain (Id) @ 25°C	15 A	14 - 15 A
Drain to Source Voltage (Vdss)	500 V	500 - 600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC	38 - 86 nC
Input Capacitance (Ciss) (Max) @ Vds	-	2650 pF
Input Capacitance (Ciss) (Max) @ Vds [Max]	1200 pF	1200 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	125 W	125 W
Power Dissipation (Max)	-	190 W
Rds On (Max) @ Id, Vgs	260 mOhm	260 - 420 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 - 30 V
Vgs(th) (Max) @ Id	4 V	4 - 4.5 V

MOSFET N-CH 500V 15A TO247-3

Part	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STW16NM50N	TO-247-3	4 V	N-Channel	15 A	1200 pF	10 V	25 V	150 °C	38 nC	500 V	MOSFET (Metal Oxide)	Through Hole	260 mOhm	TO-247-3	125 W
STMicroelectronics STW16NK60Z	TO-247-3	4.5 V	N-Channel	14 A		10 V	30 V	150 °C	86 nC	600 V	MOSFET (Metal Oxide)	Through Hole	420 mOhm	TO-247-3		190 W	2650 pF