AUIRF7379Q

Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 5.8A 8SOIC

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Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 5.8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF7379Q

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	5.8 A, 4.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.5 W
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Feature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)
Infineon Technologies AUIRF7379Q	-55 °C	150 °C	3 V	Logic Level Gate	MOSFET (Metal Oxide)	520 pF	2.5 W	4.3 A 5.8 A	Surface Mount	25 nC	8-SOIC	N and P-Channel	8-SOIC	3.9 mm	0.154 in	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 5.8A, 4.3A 2.5W Surface Mount 8-SOIC

Technical documentation and resources