IXFL34N100

IXYS

MOSFET N-CH 1000V 30A ISOPLUS264

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IXYS

MOSFET N-CH 1000V 30A ISOPLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFL34N100

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	380 nC
Input Capacitance (Ciss) (Max) @ Vds	9200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	550 W
Supplier Device Package	ISOPLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	FET Type	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
IXYS IXFL34N100	20 V	N-Channel	ISOPLUS264™	Through Hole	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-264-3 TO-264AA	380 nC	9200 pF	5 V	30 A	550 W	10 V	1000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	25	$ 27.94

General part information

N-Channel 1000 V 30A (Tc) 550W (Tc) Through Hole ISOPLUS264™

Technical documentation and resources

No documents available