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IXFP30N60X

IXFP30N60X

Obsolete
LITTELFUSE

DISCMSFT NCH ULTRJNCT XCLASS TO-220AB/FP

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IXFP30N60X

IXFP30N60X

Obsolete
LITTELFUSE

DISCMSFT NCH ULTRJNCT XCLASS TO-220AB/FP

Find alt

Description

General part information

IXFP30 Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFP30N60X
Current - Continuous Drain (Id) (Tc)30 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)56 nC
Input Capacitance (Ciss) (Max)2270 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)500 W
Rds On (Max)155 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

3D models and CAD resources for this part