TK72A12N1,S4X

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Toshiba Semiconductor and Storage

MOSFET N-CH 120V 72A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 120V 72A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK72A12N1,S4X

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	8100 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs [Max]	4.5 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Vgs (Max)
Toshiba Semiconductor and Storage TK72A12N1,S4X	130 nC	Through Hole	8100 pF	150 °C	72 A	120 V	N-Channel	TO-220SIS	45 W	4.5 mOhm	10 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack	20 V

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General part information

N-Channel 120 V 72A (Tc) 45W (Tc) Through Hole TO-220SIS

Technical documentation and resources