IXBH14N300HV
ActiveTRANS IGBT CHIP N-CH 900V 165A 830000MW 3-PIN(3+TAB) TO-247
IXBH14N300HV
ActiveTRANS IGBT CHIP N-CH 900V 165A 830000MW 3-PIN(3+TAB) TO-247
Description
General part information
IXBH14N300HV Series
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount
Technical Specifications
Parameters and characteristics for this part
| Specification | IXBH14N300HV |
|---|---|
| Current - Collector (Ic) (Max) | 38 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 62 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247HV (IXBH) |
| Power - Max | 200 W |
| Reverse Recovery Time (trr) | 1.4 µs |
| Vce(on) (Max) | 2.7 V |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
Pricing
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