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TC4427AVUA - 8-MSOP

TC4427AVUA

Active
Microchip Technology

IC,DUAL MOSFET DRIVER,CMOS,TSSOP,8PIN,PLASTIC ROHS COMPLIANT: YES

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TC4427AVUA - 8-MSOP

TC4427AVUA

Active
Microchip Technology

IC,DUAL MOSFET DRIVER,CMOS,TSSOP,8PIN,PLASTIC ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationTC4427AVUATC4427A Series
Channel Type-Independent
Current - Peak Output (Source, Sink)-1.5 A
Driven Configuration-Low-Side
Gate Type-N-Channel, P-Channel MOSFET, P-Channel
Grade-Automotive
Input Type-Non-Inverting
Mounting Type-Surface Mount, Through Hole
null-
Number of Drivers-2
Operating Temperature--40 - 0 °C
Operating Temperature-70 - 125 °C
Package / Case-8-VDFN Exposed Pad, 8-SOIC, 8-MSOP, 8-TSSOP, 8-DIP
Package / Case-3.9 mm
Package / Case-0.154 in
Package / Case-0.118 in
Package / Case-0.3 - 3 mm
Package / Case-7.62 mm
Qualification-AEC-Q100
Rise / Fall Time (Typ)-25 ns
Rise / Fall Time (Typ)-25 ns
Supplier Device Package-8-DFN-S (6x5), 8-SOIC, 8-MSOP, 8-PDIP
Voltage - Supply-18 V
Voltage - Supply-4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 300$ 1.84
Microchip DirectTUBE 1$ 2.42
25$ 2.02
100$ 1.84
1000$ 1.53
5000$ 1.41
10000$ 1.31
NewarkEach 100$ 1.90

TC4427A Series

Dual 1.5 A MOSFET Gate Driver

PartNumber of DriversSupplier Device PackageRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Voltage - Supply [Max]Voltage - Supply [Min]Driven ConfigurationCurrent - Peak Output (Source, Sink)Package / CaseGate TypeMounting TypeOperating Temperature [Min]Operating Temperature [Max]Channel TypeInput TypePackage / Case [y]Package / Case [x]QualificationGradePackage / Case [custom]Package / CasePackage / Case
Microchip Technology
TC4427AVMF713
2
8-DFN-S (6x5)
25 ns
25 ns
18 V
4.5 V
Low-Side
1.5 A, 1.5 A
8-VDFN Exposed Pad
N-Channel, P-Channel MOSFET
Surface Mount
-40 °C
125 °C
Independent
Non-Inverting
Microchip Technology
TC4427AVOA-VAO
2
8-SOIC
25 ns
25 ns
18 V
4.5 V
Low-Side
1.5 A, 1.5 A
8-SOIC
N-Channel, P-Channel MOSFET
Surface Mount
-40 °C
125 °C
Independent
Non-Inverting
3.9 mm
0.154 in
AEC-Q100
Automotive
Microchip Technology
TC4427AVUA
2
8-MSOP
25 ns
25 ns
18 V
4.5 V
Low-Side
1.5 A, 1.5 A
8-MSOP, 8-TSSOP
N-Channel, P-Channel MOSFET
Surface Mount
-40 °C
125 °C
Independent
Non-Inverting
0.118 in
3 mm
Microchip Technology
TC4427AVOA713
Microchip Technology
TC4427AEMF
2
8-DFN-S (6x5)
25 ns
25 ns
18 V
4.5 V
Low-Side
1.5 A, 1.5 A
8-VDFN Exposed Pad
N-Channel, P-Channel MOSFET
Surface Mount
-40 °C
85 °C
Independent
Non-Inverting
Microchip Technology
TC4427AVUA
Microchip Technology
TC4427ACPA
2
8-PDIP
25 ns
25 ns
18 V
4.5 V
Low-Side
1.5 A, 1.5 A
8-DIP
N-Channel, P-Channel MOSFET
Through Hole
0 °C
70 °C
Independent
Non-Inverting
0.3 in
7.62 mm
Microchip Technology
TC4427AVUA
Microchip Technology
TC4427ACOA713
2
8-SOIC
25 ns
25 ns
18 V
4.5 V
Low-Side
1.5 A, 1.5 A
8-SOIC
N-Channel, P-Channel MOSFET
Surface Mount
0 °C
70 °C
Independent
Non-Inverting
3.9 mm
0.154 in
Microchip Technology
TC4427AEPA
2
8-PDIP
25 ns
25 ns
18 V
4.5 V
Low-Side
1.5 A, 1.5 A
8-DIP
N-Channel, P-Channel, P-Channel MOSFET
Through Hole
-40 °C
85 °C
Independent
Non-Inverting
0.3 in
7.62 mm

Description

General part information

TC4427A Series

The TC4426A/4427A/4428A are improved versions of the earlier TC426/427/428 family of buffer/gate drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET gate drivers, the TC4426A/4427A/4428A can easily switch 1,000 pF gate capacitances in under 30 ns, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients.