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Description

General part information

HFA3096 Series

The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fTof 8GHz while the PNP transistors provide a fTof 5. 5GHz. Both types exhibit low noise (3. 5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers.

Technical Specifications

Parameters and characteristics for this part

SpecificationHFA3096B
Current - Collector (Ic) (Max)65 mA
DC Current Gain (hFE) (Min)20, 40
Frequency - Transition (Options)8GHz, 5.5GHz
Mounting TypeSurface Mount
Noise Figure (Typical)3.5 dB
NPN Count3
Operating Temperature150 °C
Package Length0.154 in
Package Name16-SOIC
Package Width3.9 mm
PNP Count2
Power - Max150 mW
Transistor TypeNPN, PNP
Voltage - Collector Emitter Breakdown (Max) (Value 1)12 V
Voltage - Collector Emitter Breakdown (Max) (Value 2)15 V

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