
US1KHR3G
UnknownTaiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AC
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US1KHR3G
UnknownTaiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AC
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | US1KHR3G | 
|---|---|
| Capacitance @ Vr, F | 10 pF | 
| Current - Average Rectified (Io) | 1 A | 
| Current - Reverse Leakage @ Vr | 5 µA | 
| Grade | Automotive | 
| Mounting Type | Surface Mount | 
| Operating Temperature - Junction [Max] | 150 °C | 
| Operating Temperature - Junction [Min] | -55 °C | 
| Package / Case | DO-214AC, SMA | 
| Qualification | AEC-Q101 | 
| Reverse Recovery Time (trr) | 75 ns | 
| Speed | 200 mA, 500 ns | 
| Supplier Device Package | DO-214AC (SMA) | 
| Technology | Standard | 
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V | 
| Voltage - Forward (Vf) (Max) @ If | 1.7 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
US1K Series
Diode 800 V 1A Surface Mount DO-214AC (SMA)
Documents
Technical documentation and resources