IKZ75N65NH5XKSA1

Obsolete

Infineon Technologies

IGBT TRENCH 650V 90A TO247-4

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Obsolete

Infineon Technologies

IGBT TRENCH 650V 90A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	IKZ75N65NH5XKSA1

Current - Collector (Ic) (Max) [Max]	90 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	166 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-4
Power - Max [Max]	395 W
Reverse Recovery Time (trr)	59 ns
Supplier Device Package	PG-TO247-4
Switching Energy [custom]	520 µJ
Switching Energy [custom]	880 µJ
Td (on/off) @ 25°C	412 ns, 52 ns
Test Condition	27 Ohm, 15 V, 400 V, 37.5 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Supplier Device Package	Switching Energy [custom]	Switching Energy [custom]	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Gate Charge	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Test Condition	Package / Case	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Reverse Recovery Time (trr)
Infineon Technologies IKZ75N65NH5XKSA1	PG-TO247-4	520 µJ	880 µJ	Trench	650 V	Through Hole	90 A	166 nC	395 W	2.1 V	300 A	15 V 27 Ohm 37.5 A 400 V	TO-247-4	52 ns 412 ns	-40 C	175 °C	59 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Trench 650 V 90 A 395 W Through Hole PG-TO247-4

Technical documentation and resources