IPD036N04LGBTMA1

Obsolete

Infineon Technologies

MOSFET N-CH 40V 90A TO252-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 40V 90A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD036N04LGBTMA1

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Supplier Device Package
Infineon Technologies IPD036N04LGBTMA1	94 W	90 A	Surface Mount	-55 °C	175 ░C	78 nC	40 V	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.6 mOhm	20 V	N-Channel	6300 pF	MOSFET (Metal Oxide)	PG-TO252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 90A (Tc) 94W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources

No documents available