2SA2154MFV-Y,L3F

Active

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A VESM

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A VESM

Technical Specifications

Parameters and characteristics for this part

Specification	2SA2154MFV-Y,L3F

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power - Max [Max]	150 mW
Supplier Device Package	VESM
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Mounting Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage 2SA2154MFV-GR(TPL3	150 °C	150 mA	100 nA	150 mW	PNP	50 V	200 hFE	SOT-723	Surface Mount	VESM
Toshiba Semiconductor and Storage 2SA2154MFV-Y,L3F	150 °C	150 mA	100 nA	150 mW	PNP	50 V		SOT-723	Surface Mount	VESM	120

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 150 mW Surface Mount VESM

Technical documentation and resources