Specification	VS-GB75DA120UP

Configuration	Single
Current - Collector Cutoff (Max)	250 µA
IGBT Type	NPT
Input	Standard
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Power - Max	658 W
Vce(on) (Max)	3.8 V
Voltage - Collector Emitter Breakdown (Max)	1200 V

GB75 Series

Part	Package Name	Power - Max	Current - Collector Cutoff (Max)	Package / Case	Input	Operating Temperature (Min)	Operating Temperature (Max)	Configuration	Vce(on) (Max)	Voltage - Collector Emitter Breakdown (Max)	IGBT Type	Mounting Type	Current - Collector (Ic) (Max)
Vishay General Semiconductor - Diodes Division VS-GB75SA120UP	SOT-227	658 W	250 µA	miniBLOC SOT-227-4	Standard	-40 °C	150 °C	Single	3.8 V	1200 V	NPT	Chassis Mount
Vishay General Semiconductor - Diodes Division VS-GB75LA60UF	SOT-227	447 W	50 µA	miniBLOC SOT-227-4	Standard	-40 °C	150 °C	Single	2 V	600 V	NPT	Chassis Mount	109 A
Vishay General Semiconductor - Diodes Division VS-GB75NA60UF	SOT-227	447 W	50 µA	miniBLOC SOT-227-4	Standard	-40 °C	150 °C	Single	2 V	600 V	NPT	Chassis Mount	109 A
Vishay General Semiconductor - Diodes Division VS-GB75DA120UP	SOT-227	658 W	250 µA	miniBLOC SOT-227-4	Standard	-40 °C	150 °C	Single	3.8 V	1200 V	NPT	Chassis Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources