TN2540N8-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V, 12 OHM
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TN2540N8-G
ActiveMOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V, 12 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN2540N8-G | TN2540 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 260 mA | 175 - 260 mA |
| Drain to Source Voltage (Vdss) | 400 V | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF | 125 pF |
| Mounting Type | Surface Mount | Surface Mount, Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-243AA | TO-243AA, TO-226-3, TO-92-3 |
| Power Dissipation (Max) | - | 1 W |
| Rds On (Max) @ Id, Vgs [Max] | 12 Ohm | 12 Ohm |
| Supplier Device Package | TO-243AA (SOT-89) | TO-243AA (SOT-89), TO-92-3 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.67 | |
| 25 | $ 1.38 | |||
| 100 | $ 1.27 | |||
| Digi-Reel® | 1 | $ 1.67 | ||
| 25 | $ 1.38 | |||
| 100 | $ 1.27 | |||
| Tape & Reel (TR) | 2000 | $ 1.27 | ||
| Microchip Direct | T/R | 1 | $ 1.67 | |
| 25 | $ 1.38 | |||
| 100 | $ 1.27 | |||
| 1000 | $ 1.05 | |||
| 5000 | $ 0.98 | |||
| 10000 | $ 0.90 | |||
TN2540 Series
MOSFET, N-Channel Enhancement-Mode, 400V, 12 Ohm
| Part | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Technology | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN2540N3-G-P002 | |||||||||||||||
Microchip Technology TN2540N3-G | |||||||||||||||
Microchip Technology TN2540N3-G | |||||||||||||||
Microchip Technology TN2540N8-G | Surface Mount | TO-243AA (SOT-89) | -55 °C | 150 °C | 12 Ohm | 125 pF | 20 V | 2 V | 400 V | 260 mA | N-Channel | 4.5 V, 10 V | MOSFET (Metal Oxide) | TO-243AA | |
Microchip Technology TN2540N3-G-P002 | Through Hole | TO-92-3 | -55 °C | 150 °C | 12 Ohm | 125 pF | 20 V | 2 V | 400 V | 175 mA | N-Channel | 4.5 V, 10 V | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 | 1 W |
Microchip Technology TN2540N3-G | Through Hole | TO-92-3 | -55 °C | 150 °C | 12 Ohm | 125 pF | 20 V | 2 V | 400 V | 175 mA | N-Channel | 4.5 V, 10 V | MOSFET (Metal Oxide) | TO-226-3, TO-92-3 | 1 W |
Description
General part information
TN2540 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources