STP50NE10

Obsolete

STMicroelectronics

MOSFET N-CH 100V 50A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 100V 50A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP50NE10

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	166 nC
Input Capacitance (Ciss) (Max) @ Vds	6000 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-220-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)
STMicroelectronics STP50NE08	80 V	175 °C	Through Hole	N-Channel	5100 pF	TO-220	10 V	50 A	MOSFET (Metal Oxide)	20 V	110 nC	24 mOhm	4 V	TO-220-3	150 W
STMicroelectronics STP50NE10	100 V	175 °C	Through Hole	N-Channel	6000 pF	TO-220	10 V	50 A	MOSFET (Metal Oxide)	20 V	166 nC	27 mOhm	4 V	TO-220-3	180 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 50A (Tc) 180W (Tc) Through Hole TO-220

Technical documentation and resources

No documents available