2SC6139,T2F(M

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 160V 1.5A MSTM

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 160V 1.5A MSTM

Technical Specifications

Parameters and characteristics for this part

Specification	2SC6139,T2F(M

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	140
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-71
Power - Max [Max]	1 W
Supplier Device Package	MSTM
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector (Ic) (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Supplier Device Package
Toshiba Semiconductor and Storage 2SC6139,T2F(M	160 V	Through Hole	150 °C	1 W	100 nA	500 mV	NPN	1.5 A	SC-71	140	100 MHz	MSTM

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 160 V 1.5 A 100MHz 1 W Through Hole MSTM

Technical documentation and resources