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IPP028N08N3GXKSA1

IPP028N08N3GXKSA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 2.8 MOHM;

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IPP028N08N3GXKSA1

IPP028N08N3GXKSA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 2.8 MOHM;

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Description

General part information

IPP028 Series

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP028N08N3GXKSA1
Current - Continuous Drain (Id) (Tc)100 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)206 nC
Input Capacitance (Ciss) (Max)14200 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NamePG-TO220-3
Power Dissipation (Max)300 W
Rds On (Max)2.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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Documents

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