STB4N62K3

Obsolete

STMicroelectronics

MOSFET N-CH 620V 3.8A D2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 620V 3.8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB4N62K3

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	70 W
Rds On (Max) @ Id, Vgs	1.95 Ohm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Package / Case	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STB4N62K3	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	620 V	1.95 Ohm	150 °C	N-Channel	14 nC	Surface Mount	450 pF	70 W	3.8 A	4.5 V	D2PAK	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 620 V 3.8A (Tc) 70W (Tc) Surface Mount D2PAK

Technical documentation and resources