IXFV30N60P

Obsolete

IXYS

MOSFET N-CH 600V 30A PLUS220

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 600V 30A PLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFV30N60P

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	82 nC
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXFV30N50P	MOSFET (Metal Oxide)	10 V	PLUS220	30 A	70 nC	-55 °C	150 °C	TO-220-3 Short Tab	5 V	N-Channel	Through Hole	30 V	200 mOhm	460 W	500 V
IXYS IXFV30N60P	MOSFET (Metal Oxide)	10 V	PLUS220	30 A	82 nC	-55 °C	150 °C	TO-220-3 Short Tab	5 V	N-Channel	Through Hole	30 V	240 mOhm	500 W	600 V	4000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 30A (Tc) 500W (Tc) Through Hole PLUS220

Technical documentation and resources

No documents available