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1SS417CT,L3F

1SS417CT,L3F

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Toshiba Semiconductor and Storage

DIODES, 40 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-882(CST2)

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1SS417CT,L3F

1SS417CT,L3F

Active
Toshiba Semiconductor and Storage

DIODES, 40 V/0.1 A SCHOTTKY BARRIER DIODE, SOD-882(CST2)

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Description

General part information

1SS417 Series

Diodes, 40 V/0.1 A Schottky Barrier Diode, SOD-882(CST2)

Technical Specifications

Parameters and characteristics for this part

Specification1SS417CT,L3F
Capacitance15 pF
Current - Average Rectified (Io)100 mA
Current - Reverse Leakage5 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)125 °C
Package / Case2-SMD, Flat Leads
Package NamefSC
SpeedAny Speed, Small Signal
Speed - Fast Recovery (Maximum)200 mA
Speed - Small Signal Current Max200 mA, 200 mA, 200 mA
TechnologySchottky
Voltage - DC Reverse (Vr) (Max)40 V
Voltage - Forward (Vf) (Max)620 mV

Pricing

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CAD

3D models and CAD resources for this part