IXFK180N085

Obsolete

IXYS

MOSFET N-CH 85V 180A TO264AA

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Obsolete

IXYS

MOSFET N-CH 85V 180A TO264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK180N085

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	320 nC
Input Capacitance (Ciss) (Max) @ Vds	9100 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	560 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFK180N07	6 mOhm	MOSFET (Metal Oxide)	180 A	568 W	-55 °C	150 °C	10 V	9400 pF	N-Channel	TO-264-3 TO-264AA	20 V	4 V	70 V	Through Hole	TO-264AA (IXFK)	420 nC
IXYS IXFK180N10	8 mOhm	MOSFET (Metal Oxide)	180 A	560 W	-55 °C	150 °C	10 V	10900 pF	N-Channel	TO-264-3 TO-264AA	20 V	4 V	100 V	Through Hole	TO-264AA (IXFK)		390 nC
IXYS IXFK180N085	7 mOhm	MOSFET (Metal Oxide)	180 A	560 W	-55 °C	150 °C	10 V	9100 pF	N-Channel	TO-264-3 TO-264AA	20 V	4 V	85 V	Through Hole	TO-264AA (IXFK)	320 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 85 V 180A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available