BUK9Y65-100E,115

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Nexperia USA Inc.

N-CHANNEL 100 V, 65 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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BUK9Y65-100E,115

Active

Nexperia USA Inc.

N-CHANNEL 100 V, 65 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9Y65-100E Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y65-100E,115

Current - Continuous Drain (Id) (Tc)	19 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1523 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	64 W
Qualification	AEC-Q101
Rds On (Max)	63.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2.1 V

BUK9Y65-100E Series

N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56

Part	Vgs(th) (Max)	Technology	Vgs (Max)	Grade	Mounting Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Package / Case	Gate Charge (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Package Name
Nexperia USA Inc. BUK9Y65-100E,115	2.1 V	MOSFET (Metal Oxide)	10 V	Automotive	Surface Mount	19 A	63.3 mOhm	100 V	5 V	AEC-Q101	SC-100 SOT-669	14 nC	64 W	1523 pF	-55 °C	175 °C	N-Channel	LFPAK56 Power-SO8