TSM3401CX RFG

Obsolete

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 30V 3A SOT23

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Obsolete

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 30V 3A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	TSM3401CX RFG

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	2.7 nC
Input Capacitance (Ciss) (Max) @ Vds	551.57 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Technology
Taiwan Semiconductor Corporation TSM3401CX RFG	P-Channel	20 V	-55 °C	150 °C	2.7 nC	1.25 W	30 V	Surface Mount	60 mOhm	4.5 V 10 V	3 A	SOT-23	551.57 pF	SC-59 SOT-23-3 TO-236-3	3 V	MOSFET (Metal Oxide)

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General part information

P-Channel 30 V 3A (Ta) 1.25W (Ta) Surface Mount SOT-23

Technical documentation and resources

No documents available