STP32NM50N

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STMicroelectronics

MOSFET N CH 500V 22A TO-220

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STMicroelectronics

MOSFET N CH 500V 22A TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	STP32NM50N

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1973 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	190 W
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Operating Temperature	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
STMicroelectronics STP32NM50N	N-Channel	150 °C	Through Hole	TO-220	500 V	4 V	22 A	25 V	10 V	1973 pF	MOSFET (Metal Oxide)	TO-220-3	62.5 nC	190 W

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General part information

N-Channel 500 V 22A (Tc) 190W (Tc) Through Hole TO-220

Technical documentation and resources