SSM3K16FU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 100MA USM

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 100MA USM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K16FU,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	USM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.1 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology
Toshiba Semiconductor and Storage SSM3K16FU,LF	1.1 V	150 mW	SC-70 SOT-323	N-Channel	4 V	1.5 V	Surface Mount	USM	20 V	9.3 pF	10 V	100 mA	3 Ohm	-55 °C	150 °C	MOSFET (Metal Oxide)

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General part information

N-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount USM

Technical documentation and resources

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