APTM10TDUM19PG

Obsolete

Microsemi Corporation

MOSFET 6N-CH 100V 70A SP6-P

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Obsolete

Microsemi Corporation

MOSFET 6N-CH 100V 70A SP6-P

Technical Specifications

Parameters and characteristics for this part

Specification	APTM10TDUM19PG

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	200 nC
Input Capacitance (Ciss) (Max) @ Vds	5100 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP6
Power - Max [Max]	208 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	SP6-P
Technology	MOSFET (Metal Oxide)

Part	Power - Max [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Configuration	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case
Microsemi Corporation APTM10TDUM19PG	208 W	100 V	150 °C	-40 °C	MOSFET (Metal Oxide)	200 nC	5100 pF	21 mOhm	Chassis Mount	6 N-Channel (3-Phase Bridge)	SP6-P	70 A	SP6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 100V 70A 208W Chassis Mount SP6-P

Technical documentation and resources

No documents available