IXFL38N100Q2

IXYS

MOSFET N-CH 1000V 29A ISOPLUS264

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IXYS

MOSFET N-CH 1000V 29A ISOPLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFL38N100Q2

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	380 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	ISOPLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)
IXYS IXFL38N100Q2	-55 °C	150 °C	ISOPLUS264™	280 mOhm	30 V	1000 V	13500 pF	MOSFET (Metal Oxide)	5.5 V	Through Hole	10 V	N-Channel	29 A	TO-264-3 TO-264AA	380 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	25	$ 35.91

General part information

N-Channel 1000 V 29A (Tc) 380W (Tc) Through Hole ISOPLUS264™

Technical documentation and resources

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