IPS60R650CEAKMA1

Obsolete

Infineon Technologies

CONSUMER

Search across all available documentation for this part.

Obsolete

Infineon Technologies

CONSUMER

Technical Specifications

Parameters and characteristics for this part

Specification	IPS60R650CEAKMA1

Current - Continuous Drain (Id) @ 25°C	9.9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20.5 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	82 W
Rds On (Max) @ Id, Vgs	650 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]
Infineon Technologies IPS60R650CEAKMA1	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	3.5 V	650 mOhm	440 pF	PG-TO251-3	600 V	20 V	Through Hole	N-Channel	150 °C	-40 °C	10 V	20.5 nC	9.9 A	82 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 9.9A (Tj) 82W (Tc) Through Hole PG-TO251-3

Technical documentation and resources