PN4250A PBFREE

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Central Semiconductor Corp

TRANS GP BJT PNP 60V 0.5A 625MW 3-PIN TO-92 BOX

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Central Semiconductor Corp

TRANS GP BJT PNP 60V 0.5A 625MW 3-PIN TO-92 BOX

Technical Specifications

Parameters and characteristics for this part

Specification	PN4250A PBFREE

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

TRANS GP BJT PNP 60V 0.5A 625MW 3-PIN TO-92 BOX

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Supplier Device Package	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic
Central Semiconductor Corp PN4250A PBFREE	60 V	250	150 °C	-65 °C	PNP	TO-92-3	TO-226-3, TO-92-3	625 mW	0.01 µA	500 mA	Through Hole	250 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 60 V 500 mA 625 mW Through Hole TO-92-3

Technical documentation and resources