E-L6571BD

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STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

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STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	E-L6571BD

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	170 mA
Current - Peak Output (Source, Sink) [custom]	270 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	RC Input Circuit
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	16.6 V
Voltage - Supply [Min]	10 VDC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

IC GATE DRVR HALF-BRIDGE 8SO

Part	Gate Type	Supplier Device Package	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Driven Configuration	Channel Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Number of Drivers
STMicroelectronics E-L6571BD	IGBT, N-Channel MOSFET	8-SOIC	RC Input Circuit	170 mA	270 mA	Surface Mount	600 V	150 °C	-40 °C	Half-Bridge	Synchronous	10 VDC	16.6 V	8-SOIC	3.9 mm	0.154 in	2

General part information

Half-Bridge Gate Driver IC RC Input Circuit 8-SOIC

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