STW28NK60Z

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STMicroelectronics

MOSFET N-CH 600V 27A TO247-3

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STMicroelectronics

MOSFET N-CH 600V 27A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW28NK60Z

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	264 nC
Input Capacitance (Ciss) (Max) @ Vds	6350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	350 W
Rds On (Max) @ Id, Vgs [Max]	185 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

MOSFET N-CH 600V 27A TO247-3

Part	Vgs (Max)	Power Dissipation (Max)	FET Type	Technology	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
STMicroelectronics STW28NK60Z	30 V	350 W	N-Channel	MOSFET (Metal Oxide)	TO-247-3	TO-247-3	600 V	10 V	6350 pF	185 mOhm	-55 °C	150 °C	27 A	4.5 V	264 nC	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 27A (Tc) 350W (Tc) Through Hole TO-247-3

Technical documentation and resources