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R6004JNXC7G

R6004JNXC7G

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Rohm Semiconductor

600V 4A TO-220FM, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

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R6004JNXC7G

R6004JNXC7G

Active
Rohm Semiconductor

600V 4A TO-220FM, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

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Description

General part information

R6004JNX Series

R6004JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Technical Specifications

Parameters and characteristics for this part

SpecificationR6004JNXC7G
Current - Continuous Drain (Id) (Tc)4 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)10.5 nC
Input Capacitance (Ciss) (Max)260 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220FM
Power Dissipation (Max)35 W
Rds On (Max)1.43 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)7 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Technical Data Sheet EN
Benefits given by PrestoMOS™ series for the Phase-Shift Full-Bridge
List of Transistor Package Thermal Resistance
How to Create Symbols for PSpice Models
R6004JNX ESD Data
Double-pulse test substantiated advantages of PrestoMOS™
Precautions When Measuring the Rear of the Package with a Thermocouple
ROHM Solution Simulator Power Device User's Guide for Inverter
Impedance Characteristics of Bypass Capacitor
Explanation for Marking
What Is Thermal Design
Types and Features of Transistors
Method for Monitoring Switching Waveform
θ<sub>JA</sub> and Ψ<sub>JT</sub>
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Notes for Calculating Power Consumption:Static Operation
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Compliance of the RoHS directive
MOSFET Gate Drive Current Setting for Motor Driving
Importance of Probe Calibration When Measuring Power: Deskew
PCB Layout Thermal Design Guide
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
R6004JNX Data Sheet
Part Explanation
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Notes for Temperature Measurement Using Forward Voltage of PN Junction
How to Use LTspice&reg; Models
Two-Resistor Model for Thermal Simulation
Reliability Test Result
Judgment Criteria of Thermal Evaluation
Anti-Whisker formation - Transistors
Calculation of Power Dissipation in Switching Circuit
Package Dimensions
Notes for Temperature Measurement Using Thermocouples
About Flammability of Materials
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Basics of Thermal Resistance and Heat Dissipation
Inner Structure
MOSFET Gate Resistor Setting for Motor Driving
How to Use LTspice&reg; Models: Tips for Improving Convergence
Temperature derating method for Safe Operating Area (SOA)
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Moisture Sensitivity Level - Transistors
About Export Regulations
What is a Thermal Model? (Transistor)
Measurement Method and Usage of Thermal Resistance RthJC