IXTA240N055T7

Obsolete

IXYS

MOSFET N-CH 55V 240A TO263-7

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Obsolete

IXYS

MOSFET N-CH 55V 240A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA240N055T7

Current - Continuous Drain (Id) @ 25°C	240 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	7600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	TO-263-7 (IXTA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	FET Type
IXYS IXTA240N055T	-55 °C	175 ░C	Surface Mount	240 A	7600 pF	480 W	TO-263AA	3.6 mOhm	20 V	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	55 V	MOSFET (Metal Oxide)	4 V	170 nC	N-Channel
IXYS IXTA240N055T7	-55 °C	175 ░C	Surface Mount	240 A	7600 pF	480 W	TO-263-7 (IXTA)	3.6 mOhm	20 V	10 V	D2PAK TO-263-7	55 V	MOSFET (Metal Oxide)	4 V	170 nC	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 240A (Tc) 480W (Tc) Surface Mount TO-263-7 (IXTA)

Technical documentation and resources

No documents available