CRS05(TE85L,Q,M)

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A S-FLAT

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Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A S-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CRS05(TE85L,Q,M)

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-123F
Speed	200 mA, 500 ns
Supplier Device Package	S-FLAT (1.6x3.5)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	450 mV

Part	Technology	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
Toshiba Semiconductor and Storage CRS05(TE85L,Q,M)	Schottky	450 mV	150 °C	-40 °C	200 µA	1 A	S-FLAT (1.6x3.5)	SOD-123F	200 mA 500 ns	30 V	Surface Mount

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General part information

Diode 30 V 1A Surface Mount S-FLAT (1.6x3.5)

Technical documentation and resources