NP50P03YDG-E1-AY

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Renesas Electronics Corporation

PCH POWER MOSFET -30V -50A 8.4MOHM POWER SON-8 5X6 FOR AUTOMOTIVE

NP50P03YDG-E1-AY

Active

Renesas Electronics Corporation

PCH POWER MOSFET -30V -50A 8.4MOHM POWER SON-8 5X6 FOR AUTOMOTIVE

Description Specifications Series Pricing CAD Documents

Description

General part information

NP Series Series

Low on-state resistanceRDS(on) = 8.4 mO MAX. (VGS = -10 V, ID = -25 A)

RDS(on) = 8.4 mO MAX. (VGS = -10 V, ID = -25 A)

Low Ciss: Ciss = 2300 pF TYP. (VDS = -25 V, VGS = 0 V)

Technical Specifications

Parameters and characteristics for this part

Specification	NP50P03YDG-E1-AY

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	96 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	Flat Lead Exposed Pad, 8-SMD
Package Name	8-HSON
Power Dissipation (Max)	1 W, 102 W
Qualification	AEC-Q101
Rds On (Max)	8.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

NP Series Series

...

Part	Vgs(th) (Max)	FET Type	Gate Charge (Max)	Package / Case	Technology	Input Capacitance (Ciss) (Max)	Rds On (Max)	Operating Temperature	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Grade	Current - Continuous Drain (Id) (Tc)	Package Name	Mounting Type	Qualification	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On, Min Rds On)
Renesas Electronics Corporation NP82N04NLG-S18-AY	2.5 V	N-Channel	150 nC	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	9000 pF	4.2 mOhm	175 °C	1.8 W 143 W	40 V	Automotive	82 A	TO-262	Through Hole	AEC-Q101
Renesas Electronics Corporation NP80N04PLG-E1B-AY	2.5 V	N-Channel	135 nC 135 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	6900 pF	4.5 mOhm	175 °C	1.8 W 115 W	40 V	Automotive	80 A	TO-263	Surface Mount	AEC-Q101	20 V	10 V	4.5 V
Renesas Electronics Corporation NP50P03YDG-E1-AY	2.5 V	P-Channel	96 nC	8-SMD Flat Lead Exposed Pad	MOSFET (Metal Oxide)	3500 pF	8.4 mOhm	175 °C	1 W 102 W	30 V	Automotive	50 A	8-HSON	Surface Mount	AEC-Q101	20 V	10 V	5 V
Renesas Electronics Corporation NP50P04SLG-E1-AY	2.5 V	P-Channel	150 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	5700 pF	9.6 mOhm	175 °C	1.2 W 84 W	40 V	Automotive		TO-252 (MP-3ZK)	Surface Mount	AEC-Q101	20 V	10 V	4.5 V	50 A
Renesas Electronics Corporation NP80N04MLG-S18-AY	2.5 V	N-Channel	135 nC 135 nC	TO-220-3	MOSFET (Metal Oxide)	6900 pF	4.8 mOhm	175 °C	1.8 W 115 W	40 V	Automotive	80 A	TO-220	Through Hole	AEC-Q101
Renesas Electronics Corporation NP45N06PUK-E1-AY	4 V	N-Channel	45 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	2540 pF	9.6 mOhm	175 °C	1.2 W 75 W	60 V	Automotive	45 A	TO-263-3	Surface Mount	AEC-Q101	20 V				10 V
Renesas Electronics Corporation NP90N04MUK-S18-AY	4 V	N-Channel	120 nC	TO-220-3 Full Pack	MOSFET (Metal Oxide)	7050 pF	2.8 mOhm	175 °C	1.8 W 176 W	40 V	Automotive	90 A	TO-220	Through Hole	AEC-Q101	20 V				10 V
Renesas Electronics Corporation NP80N04KHE-E1-AY	4 V	N-Channel	60 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	3300 pF	8 mOhm	175 °C	1.8 W 120 W	40 V		80 A	TO-263	Surface Mount		20 V				10 V
Renesas Electronics Corporation NP40N055KHE-E1-AZ
Renesas Electronics Corporation NP82N10PUF-E1-AY	3.3 V	N-Channel	96 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4350 pF	15 mOhm 15 mOhm	175 °C	1.8 W 150 W	100 V	Automotive	82 A	TO-263-3	Surface Mount	AEC-Q101	20 V	10 V	5.8 V