IXTN62N50L

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IXYS

MOSFET N-CH 500V 62A SOT227B

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IXYS

MOSFET N-CH 500V 62A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXTN62N50L

Current - Continuous Drain (Id) @ 25°C	62 A
Drain to Source Voltage (Vdss)	500 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	550 nC
Input Capacitance (Ciss) (Max) @ Vds	11500 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	800 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Package / Case	Technology	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXTN62N50L	5 V	SOT-227-4 miniBLOC	MOSFET (Metal Oxide)	30 V	Chassis Mount	-55 °C	150 °C	800 W	500 V	100 mOhm	N-Channel	SOT-227B	62 A	550 nC	11500 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 62A (Tc) 800W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

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