IXFX180N10

IXYS

MOSFET N-CH 100V 180A PLUS247

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IXYS

MOSFET N-CH 100V 180A PLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX180N10

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	390 nC
Input Capacitance (Ciss) (Max) @ Vds	10900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max) [Max]	560 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFX180N10	N-Channel	4 V	PLUS247™-3	10 V	390 nC	100 V	8 mOhm	560 W	180 A	TO-247-3 Variant	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	Through Hole	10900 pF
IXYS IXFX180N085	N-Channel	4 V	PLUS247™-3	10 V		85 V	7 mOhm	560 W	180 A	TO-247-3 Variant	-55 °C	150 °C	20 V	MOSFET (Metal Oxide)	Through Hole	9100 pF	320 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 13.60

General part information

N-Channel 100 V 180A (Tc) 560W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

No documents available