SUM18N25-165-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 18A TO263

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 18A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM18N25-165-E3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.75 W, 150 W
Rds On (Max) @ Id, Vgs	165 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Vishay General Semiconductor - Diodes Division SUM18N25-165-E3	1950 pF	3.75 W 150 W	-55 °C	175 ░C	165 mOhm	TO-263 (D2PAK)	N-Channel	4 V	250 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	10 V	45 nC	MOSFET (Metal Oxide)	18 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 18A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available