CMS04(TE12L)

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CMS04(TE12L)

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	8 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-128
Speed	200 mA, 500 ns
Supplier Device Package	M-FLAT (2.4x3.8)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V

Part	Package / Case	Current - Reverse Leakage @ Vr	Technology	Speed	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Toshiba Semiconductor and Storage CMS04(TE12L)	SOD-128	8 mA	Schottky	200 mA 500 ns	M-FLAT (2.4x3.8)	5 A	Surface Mount	30 V	125 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30 V 5A Surface Mount M-FLAT (2.4x3.8)

Technical documentation and resources