IXFQ94N30P3

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IXYS

MOSFET N-CH 300V 94A TO3P

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IXYS

MOSFET N-CH 300V 94A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXFQ94N30P3

Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	5510 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	1040 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
IXYS IXFQ94N30P3	N-Channel	Through Hole	102 nC	36 mOhm	5510 pF	MOSFET (Metal Oxide)	20 V	TO-3P	-55 °C	150 °C	10 V	SC-65-3 TO-3P-3	1040 W	300 V	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 300 V 94A (Tc) 1040W (Tc) Through Hole TO-3P

Technical documentation and resources

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