BSL308PEL6327HTSA1

Obsolete

Infineon Technologies

MOSFET 2P-CH 30V 2A TSOP6-6

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Obsolete

Infineon Technologies

MOSFET 2P-CH 30V 2A TSOP6-6

Technical Specifications

Parameters and characteristics for this part

Specification	BSL308PEL6327HTSA1

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	80 mOhm
Supplier Device Package	PG-TSOP6-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Qualification	Configuration	Technology	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Grade	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Feature
Infineon Technologies BSL308PEH6327XTSA1	PG-TSOP6-6	-55 °C	150 °C	1 V	Surface Mount	5 nC	SOT-23-6 Thin TSOT-23-6	AEC-Q101	2 P-Channel	MOSFET (Metal Oxide)	500 mW	500 pF	2 A	Automotive	30 V	80 mOhm	4.5V Drive Logic Level Gate
Infineon Technologies BSL308PEL6327HTSA1	PG-TSOP6-6	-55 °C	150 °C	1 V	Surface Mount	5 nC	SOT-23-6 Thin TSOT-23-6		2 P-Channel	MOSFET (Metal Oxide)	500 mW	500 pF	2 A		30 V	80 mOhm	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 2A 500mW Surface Mount PG-TSOP6-6

Technical documentation and resources

No documents available